N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
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IMW65R048M1HXKSA1

DigiKey Part Number
448-IMW65R048M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R048M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Customer Reference
Detailed Description
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW65R048M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id
5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1118 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
Product Questions and Answers

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In-Stock: 429
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in ZAR
Tube
QuantityUnit PriceExt Price
1R143,53000R143,53
30R84,27800R2 528,34
120R71,28825R8 554,59
510R66,30904R33 817,61
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.