Name: IMW120R040M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW120R040M1HXKSA1-ND
Price: 211.25 ZAR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW120R040M1HXKSA1
DigiKey Part Number	448-IMW120R040M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW120R040M1HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 55A (Tc) 227W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	IMW120R040M1HXKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	54.4mOhm @ 19.3A, 18V
Vgs(th) (Max) @ Id	5.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 18 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3