Name: DMWSH120H90SM3
Brand: Diodes Incorporated
SKU: 31-DMWSH120H90SM3-ND
Price: 188.9 ZAR
Availability: InStock

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DMWSH120H90SM3
cms-digikey-product-number	31-DMWSH120H90SM3-ND
cms-manufacturer	Diodes Incorporated
cms-manufacturer-product-number	DMWSH120H90SM3
cms-description	SICFET N-CH 1200V TO-247
cms-standard-lead-time	12 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 41A (Tc) 246W (Tc) Through Hole TO-247
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	97.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	50.9 nC @ 15 V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	246W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3