EPC

EPC2112/EPC2115 eGaN® ICs

EPC's EPC2112/EPC2115 eGaN ICs are designed for high-frequency DC/DC converters and resonant wireless power

Image of EPC's EPC2112 and EPC2115 eGaN ICsEPC’s GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency while maintaining a small footprint.

The EPC2112 is a 200 V, 40 mΩ eGaN FET plus integrated gate driver.

The EPC2115 is an integrated circuit with dual 150 V, 70 mΩ eGaN FETs plus gate driver.

Features
  • High-frequency capability
    • Monolithic integration eliminates interconnect inductances for higher efficiency at higher frequency
    • Capable of operating up to 7 MHz
  • Small footprint
    • Low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die
Applications
  
  • High-frequency DC/DC converters
  
  • Resonant wireless power
Published: 2018-05-04

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