TPH3206LD Datasheet by Renesas Electronics Corporation

transphcirm continued new eTPH3208LDGB AN0009 ANOOO3 OS
March 27, 2018 © 2017 Transphorm Inc. Subject to change without notice.
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TPH3206LD-Discontinued
600V Cascode GaN FET in PQFN88 (drain tab)
Cascode Device Structure
Key Specifications
VDS (V) min 600
VTDS (V) max 750
RDS(on) (mΩ) max* 180
Qrr (nC) typ 54
Qg (nC) typ 6
* Dynamic R(on)
Features
Easy to drive—compatible with standard gate drivers
Low conduction and switching losses
Low Qrr of 54nC—no free-wheeling diode required
JEDEC-qualified GaN technology
RoHS compliant and Halogen-free
Benefits
Increased efficiency through fast switching
Increased power density
Reduced system size and weight
Enables more efficient topologies—easy to implement
bridgeless totem-pole designs
Lower BOM cost
Applications
Renewable energy
Industrial
Automotive
Telecom and datacom
Servo motors
Description
The TPH3206LD 600V, 150mΩ gallium nitride (GaN) FET is
a normally-off device. Transphorm GaN FETs offer better
efficiency through lower gate charge, faster switching
speeds, and smaller reverse recovery charge, delivering
significant advantages over traditional silicon (Si) devices.
Transphorm is a leading-edge wide band gap supplier with
world-class innovation and a portfolio of fully-qualified GaN
transistors that enables increased performance and
reduced overall system size and cost.
Related Literature
AN0009: Recommended External Circuitry for GaN FETs
AN0003: Printed Circuit Board Layout and Probing
Ordering Information
Part Number* Package Package
Configuration
TPH3206LD 8 x 8mm PQFN Common Drain
* Add “-TR” suffix for tape and reel
TPH3206LD
8x8 PQFN
(bottom view)
G
D
S
K
Discontinued for new
designs— see TPH3206LDGB
Notes: transphzgirm
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TPH3206LD-Discontinued
Absolute Maximum Ratings (TC=25°C unless otherwise stated)
Symbol Parameter Limit Value Unit
ID25°C Continuous drain current @TC=25°C a 17 A
ID100°C Continuous drain current @TC=100°C a 12 A
IDM Pulsed drain current (pulse width: 100µs) 60 A
VDSS Drain to source voltage 600 V
VTDS Transient drain to source voltage b 750 V
VGSS Gate to source voltage ±18 V
PD25°C Maximum power dissipation 96 W
TC Operating temperature Case -55 to +150 °C
TJ Junction -55 to +175 °C
TS -55 to +150 °C Storage temperature
TCSOLD Soldering peak temperature c 260 °C
Thermal Resistance
Symbol Parameter Typical Unit
RΘJC Junction-to-case 1.55 °C/W
RΘJA Junction-to-ambient d 45 °C/W
Notes:
a. For high current operation, see application note AN0009
b. In off-state, spike duty cycle D<0.1, spike duration <1µs
c. Reflow MSL3
d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling; with 6cm2 copper area and 70µm thickness)
Drain-to-source leakage current Drain-to-source leakage current V =OV, Tc: 100 ' C, Notes: transphorm
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Electrical Parameters (TC=25°C unless otherwise stated)
Symbol Parameter Min Typ Max Unit Test Conditions
Forward Device Characteristics
VDSS-MAX Maximum drain-source voltage 600 — — V VGS=0V
VGS(th) Gate threshold voltage 1.65 2.1 2.6 V VDS=VGS, ID=500µA
RDS(on)
Drain-source on-resistance (TJ=25°C) a — 150 180
mΩ
VGS=8V, ID=11A, TJ=25°C
Drain-source on-resistance (TJ=175°C) a — 340 — VGS=8V, ID=11A, TJ=175°C
IDSS
Drain-to-source leakage current
(TJ=25°C) — 2.5 30
µA
VDS=600V, VGS=0V, TJ=25°C
Drain-to-source leakage current
(TJ=150°C) — 8 — VDS=600V, VGS=0V, TJ=150°C
IGSS
Gate-to-source forward leakage current — — 100
nA
VGS=18V
Gate-to-source reverse leakage current — — -100 VGS=-18V
CISS Input capacitance — 760 —
pF VGS=0V, VDS=480V, f=1MHz
COSS Output capacitance — 44 —
CRSS Reverse transfer capacitance — 5 —
CO(er) Output capacitance, energy related b — 64 —
pF VGS=0V, VDS=0V to 480V
CO(tr) Output capacitance, time related c — 105 —
Qg Total gate charge d — 6.2 9.3
nC VDS=100V, VGS=0V to 4.5V,
ID=11A
Qgs Gate-source charge — 2.1 —
Qgd Gate-drain charge — 2.2 —
td(on) Turn-on delay — 6 —
ns VDS=480V, VGS=0V to 10V,
ID=11A, RG=2Ω
tr Rise time — 4.5 —
Td(off) Turn-off delay — 9.7 —
tf Fall time — 4 —
Reverse Device Characteristics
IS Reverse current — — 12 A VGS=0V, TC=100°C,
≤50% Duty Cycle
VSD Reverse voltage a
— 2.6 —
V
VGS=0V, IS=12A, TJ=25°C
— 4.6 — VGS=0V, IS=12A, TJ=175°C
— 1.8 — VGS=0V, IS=6A, TJ=25°C
trr Reverse recovery time — 17 — ns IS=11A, VDD=400V,
di/dt=2000A/µs, TJ=25°C
Qrr Reverse recovery charge — 54 — nC
Notes:
a. Dynamic value
b. Equivalent capacitance to give same stored energy from 0V to 480V
c. Equivalent capacitance to give same charging time from 0V to 480V
d. Qg does not change for VDS>100V
TPH3206LD-Discontinued
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Figure 1. Typical Output Characteristics TJ=25°C
Parameter: VGS
Figure 3. Typical Transfer Characteristics
VDS=10V, Parameter: TJ
Figure 4. Normalized On-Resistance
ID=12A, VGS=8V
Figure 2. Typical Output Characteristics TJ=175°C
Parameter: VGS
Typical Characteristics (25°C unless otherwise stated)
TPH3206LD-Discontinued
C [W ‘s W 12 10 Eoss W] m 100 200 300 400 500 600 VuslVJ VDS VJ 50 45 4D 4D 35 D m‘ EU 30 .— ? g 25 n , 2mm V g D 5 4 5 7 B 25 50 75 100 125 150 175 200 VSDIVJ TzaseFCJ transphcirm
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Figure 5. Typical Capacitance
VGS=0V, f=1MHz
Figure 6. Typical COSS Stored Energy
Figure 7. Forward Characteristics of Rev. Diode
IS=f(VSD), Parameter TJ
Figure 8. Current Derating
Pulse width ≤ 100µs
Typical Characteristics (25°C unless otherwise stated)
TPH3206LD-Discontinued
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Figure 9. Safe Operating Area TC=25°C
(calculated based on thermal limit)
Figure 10. Safe Operating Area TC=80°C
(calculated based on thermal limit)
Figure 11. Transient Thermal Resistance Figure 12. Power Dissipation
Typical Characteristics (25°C unless otherwise stated)
TPH3206LD-Discontinued
DVU.T VGS VDS “W,— m mr m A1! 90% pm =Is.tF Q” = Q: .0; ‘ l —w‘ ‘n— 2 Sus .01% Duty Cyde transphzwrm
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Figure 14. Switching Time Waveform
Figure 15. Test Circuit for Diode Characteristics Figure 16. Diode Recovery Waveform
Test Circuits and Waveforms
Figure 13. Switching Time Test Circuit
*See app note AN0009 for methods to ensure
clean switching
VDS
VGS
90%
10%
toff
tf
td(off)
tr
td(on)
ton
SiC Diode
(C3D06060A)
Figure 17. Test Circuit for Dynamic RDS(on) Figure 18. Dynamic RDS(on) Waveform
VDS
D.U.T.
A
ID
TPH3206LD-Discontinued
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Mechanical 8x8 PQFN (LD) Package
TPH3206LD-Discontinued
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PQFN88 Tape and Reel Information
Gate tab is Pin 1
(no DOT indicator)
Carrier Tape Dimension
Gate tab toward
sprocket hole
Product Orientation
Leader empty pockets: 400mm/15.75” min
Trailer empty pickets: 160mm/6.3” min
Quantity per reel: 500 pcs
TPH3206LD-Discontinued
Switches Printed Circuit Board Layout and Probing for GaN Power Minimize circuit Inductance by keeping traces short, both in Twist the pins of T0-220 or TO-247 to accommodate GDS Minimize lead length of TO-22O and T0-247 package when Use long traces in drive circuit, long lead length of the Use shortest sense loop for probing: attach the probe and its Use differential mode probe or probe ground clip With long AN0003 AN0002 AN0003 ANOOO4 ANOOO7 ANOOO8 AN0009 Evaluation Boards transphzfirm
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Design Considerations
The fast switching of GaN devices reduces current-voltage cross-over losses and enables high frequency operation while
simultaneously achieving high efficiency. However, taking full advantage of the fast switching characteristics of GaN switches
requires adherence to specific PCB layout guidelines and probing techniques.
Before evaluating Transphorm GaN devices, see application note Printed Circuit Board Layout and Probing for GaN Power
Switches. The table below provides some practical rules that should be followed during the evaluation.
When Evaluating Transphorm GaN Devices:
DO DO NOT
Minimize circuit inductance by keeping traces short, both in
the drive and power loop
Twist the pins of TO-220 or TO-247 to accommodate GDS
board layout
Minimize lead length of TO-220 and TO-247 package when
mounting to the PCB
Use long traces in drive circuit, long lead length of the
devices
Use shortest sense loop for probing; attach the probe and its
ground connection directly to the test points
Use differential mode probe or probe ground clip with long
wire
See AN0003: Printed Circuit Board Layout and Probing
Application Notes
AN0002: Characteristics of Transphorm GaN Power Switches
AN0003: Printed Circuit Board Layout and Probing
AN0004: Designing Hard-switched Bridges with GaN
AN0007: PQFN Lead-Free 2nd Level Soldering Recommendations for Vapor Phase Reflow
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for GaN FETs
Evaluation Boards
TDPS500E2C1-KIT: 1kW totem-pole PFC evaluation platform
TDPS1000E0E10-KIT: 1kW hard-switched half-bridge, buck, or boost evaluation platform
TDPV1000E0C1-KIT: 1kW inverter evaluation platform
TPH3206LD-Discontinued
Formatting Changes to p. 3, revision of dynamic measurement verbiage, added transphzfirm
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Revision History
Version Date Change(s)
8 11/15/2016 Added application note AN0009
9 12/12/2016 Formatting Changes to p. 3, revision of dynamic measurement verbiage, added
NRND
10 03/27/2018 Discontinued move to TPH3206LDGB
TPH3206LD-Discontinued