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IRF100P218XKMA1 N-Channel 100V 209A (Tc) 556W (Tc) Through Hole TO-247AC
Price & Procurement
298 In Stock
Can ship immediately
 

Quantity
All prices are in ZAR.
Price Break Unit Price Extended Price
1 127,15000 ZAR 127,15
10 114,82800 ZAR 1 148,28
25 109,48520 ZAR 2 737,13
100 90,79060 ZAR 9 079,06
500 80,10938 ZAR 40 054,69
1 000 72,09844 ZAR 72 098,44
2 500 69,42812 ZAR 173 570,31
5 000 65,68969 ZAR 328 448,44
9 000 64,08750 ZAR 576 787,50

Submit a request for quotation on quantities greater than those displayed.

IRF100P218XKMA1

Datasheet
Digi-Key Part Number IRF100P218XKMA1-ND
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Manufacturer

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Manufacturer Part Number IRF100P218XKMA1
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Description TRENCH_MOSFETS
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 100V 209A (Tc) 556W (Tc) Through Hole TO-247AC

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Customer Reference
Documents & Media
Datasheets RF100P218
IRF100P218
Other Related Documents IR Part Numbering System
PCN Design/Specification Mult Dev Label Chgs Aug/2020
PCN Packaging Mult Dev Label Chgs 18/Feb/2020
EDA / CAD Models IRF100P218XKMA1 by SnapEDA
IRF100P218XKMA1 by Ultra Librarian
Simulation Models IRF100P218 Saber File
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series StrongIRFET™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs 555nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 25000pF @ 50V
FET Feature -
Power Dissipation (Max) 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 25
Other Names IRF100P218
SP001619550