Transistors - JFETs

Results: 740
Manufacturer
Central Semiconductor CorpFairchild SemiconductorFreescale SemiconductorHarris CorporationInfineon TechnologiesMicrochip TechnologyMicrosemi CorporationNXP USA Inc.onsemiPanasonic Electronic ComponentsRenesas Electronics America IncRohm SemiconductorSanyo
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Series
-*Automotive, AEC-Q101Military, MIL-PRF-19500Military, MIL-PRF-19500/295Military, MIL-PRF-19500/375Military, MIL-PRF-19500/385Military, MIL-PRF-19500/431
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Packaging
BagBoxBulkCut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)TrayTube
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Part Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
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FET Type
2 N-Channel (Dual)-N-ChannelP-Channel
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Voltage - Breakdown (V(BR)GSS)
15 V20 V22 V25 V30 V35 V40 V50 V650 V1200 V
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Drain to Source Voltage (Vdss)
0.6 V15 V20 V25 V30 V35 V40 V50 V55 V650 V1200 V
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Current - Drain (Idss) @ Vds (Vgs=0)
1.4 µA @ 10 V1.5 µA @ 1200 V3.3 µA @ 1200 V5 µA @ 1200 V30 µA @ 10 V50 µA @ 10 V50 µA @ 20 V60 µA @ 10 V80 µA @ 10 V100 µA @ 2 V100 µA @ 5 V
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Current Drain (Id) - Max
100 pA250 pA1 mA2 mA5 mA6.5 mA10 mA20 mA30 mA50 mA26 A32 A33.5 A
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Voltage - Cutoff (VGS off) @ Id
0 V @ 10 µA100 mV @ 1 µA100 mV @ 10 µA180 mV @ 1 µA200 mV @ 1 µA200 mV @ 100 nA200 mV @ 100 µA300 mV @ 10 nA300 mV @ 100 nA300 mV @ 100 µA400 mV @ 100 nA
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Input Capacitance (Ciss) (Max) @ Vds
0.7pF @ 10V1pF @ 10V1.7pF @ 10V2.2pF @ 15V3pF @ 10V3.1pF @ 2V3.5pF @ 2V3.5pF @ 5V4pF @ 10V4pF @ 15V4.1pF @ 5V4.5pF @ 15V4.9pF @ 5V
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Resistance - RDS(On)
33 mOhms45 mOhms55 mOhms70 mOhms90 mOhms95 mOhms100 mOhms3 Ohms5 Ohms6 Ohms7 Ohms
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Power - Max
30 mW100 mW125 mW150 mW190 mW200 mW225 mW250 mW300 mW310 mW325 mW
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Operating Temperature
-65°C ~ 135°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-50°C ~ 150°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 85°C (TA)-20°C ~ 80°C (TA)125°C (TJ)
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Mounting Type
-Surface MountThrough Hole
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Package / Case
3-SMD, Flat Lead3-SMD, No Lead3-SSIP3-XFDFN4-SMD, No Lead5-SMD, Flat Leads5-TSSOP, SC-70-5, SOT-3536-TSSOP, SC-88, SOT-363-DieSC-70, SOT-323SC-72SC-74, SOT-457
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Supplier Device Package
3-CP3-CPH3-MCPH3-MPAK3-SPA3-UB (3.09x2.45)3-USFP3-VTFP4-SMD5-MCPH6-CPH6-TSSOP-
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Stocking Options
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Environmental Options
Marketplace Product
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Mfr Part #
Price
Stock
Supplier
Mfr
Min Qty
DK Part #
Series
Package
Part Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
MMBFJ112
JFET N-CH 35V 0.35W SOT-23
R6,18000
7 611 - Immediate
onsemionsemi
1
MMBFJ112TR-ND
MMBFJ112CT-ND
MMBFJ112DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms350 mW-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3
SOT-23-3
MMBFJ201
JFET N-CH 40V 350MW SOT23
R7,21000
23 560 - Immediate
onsemionsemi
1
MMBFJ201TR-ND
MMBFJ201CT-ND
MMBFJ201DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel40 V-200 µA @ 20 V-300 mV @ 10 nA--350 mW-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3
SOT-23-3
CPH3910-TL-E
JFET N-CH 25V 50MA 3CPH
R7,06000
2 569 - Immediate
onsemionsemi
1
CPH3910-TL-EOSTR-ND
CPH3910-TL-EOSCT-ND
CPH3910-TL-EOSDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel25 V25 V20 mA @ 5 V50 mA1.8 V @ 100 µA6pF @ 5V-400 mW150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-33-CPH
TO-206AA TO-18-3
2N4392 PBFREE
JFET N-CH 40V 1.8W TO-18
R46,19000
15 869 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
1514-2N4392PBFREE-ND
-
Bulk
ActiveN-Channel40 V-25 mA @ 20 V-2 V @ 1 nA14pF @ 20V60 Ohms1.8 W-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
TO-206AA TO-18-3
2N4393 PBFREE
JFET N-CH 40V 1.8W TO-18
R47,07000
3 935 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
1514-2N4393PBFREE-ND
-
Bulk
ActiveN-Channel40 V-5 mA @ 20 V-500 mV @ 1 nA14pF @ 20V100 Ohms1.8 W-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
TO-92-3 Formed Leads
J111-D74Z
JFET N-CH 35V 625MW TO92-3
R6,91000
11 180 - Immediate
36 000 - Factory
onsemionsemi
1
J111-D74ZCT-ND
J111-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J113-D74Z
JFET N-CH 35V 625MW TO92
R5,74000
16 229 - Immediate
onsemionsemi
1
J113-D74ZCT-ND
J113-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J111-D26Z
JFET N-CH 35V 625MW TO92
R7,50000
21 422 - Immediate
74 000 - Factory
onsemionsemi
1
J111-D26ZTR-ND
J111-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J112-D26Z
JFET N-CH 35V 625MW TO92-3
R6,03000
3 703 - Immediate
onsemionsemi
1
J112-D26ZTR-ND
J112-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J112-D74Z
JFET N-CH 35V 625MW TO92
R6,33000
7 734 - Immediate
onsemionsemi
1
J112-D74ZCT-ND
J112-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J176-D74Z
JFET P-CH 30V 0.35W TO92
R7,80000
3 336 - Immediate
onsemionsemi
1
J176-D74ZCT-ND
J176-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveP-Channel30 V-2 mA @ 15 V-1 V @ 10 nA-250 Ohms350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J175-D26Z
JFET P-CH 30V 0.35W TO92-3
R6,62000
9 658 - Immediate
onsemionsemi
1
J175-D26ZTR-ND
J175-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveP-Channel30 V-7 mA @ 15 V-3 V @ 10 nA-125 Ohms350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
TO-92-3 Formed Leads
J109-D26Z
JFET N-CH 25V 625MW TO92
R8,09000
3 533 - Immediate
onsemionsemi
1
J109-D26ZTR-ND
J109-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel25 V-40 mA @ 15 V-2 V @ 10 nA-12 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
SC-70, SOT-323 PKG
2SK880GRTE85LF
JFET N-CH 50V 0.1W USM
R9,12000
3 000 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK880GRTE85LFTR-ND
2SK880GRTE85LFCT-ND
2SK880GRTE85LFDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel50 V-2.6 mA @ 10 V-1.5 V @ 100 nA13pF @ 10V-100 mW125°C (TJ)Surface MountSC-70, SOT-323SC-70
SC-74A, SOT-753
2SK2145-Y(TE85L,F)
MOSFET 2N-CH JFET 50V SMV
R10,44000
5 024 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK2145-Y(TE85LF)TR-ND
2SK2145-Y(TE85LF)CT-ND
2SK2145-Y(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active2 N-Channel (Dual)--1.2 mA @ 10 V-200 mV @ 100 nA13pF @ 10V-300 mW125°C (TJ)Surface MountSC-74A, SOT-753SMV
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
2SK3320-BL(TE85L,F
JFET DUAL N-CH USV
R11,62000
3 017 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK3320-BL(TE85LFTR-ND
2SK3320-BL(TE85LFCT-ND
2SK3320-BL(TE85LFDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel--6 mA @ 10 V-200 mV @ 100 nA13pF @ 10V-200 mW125°C (TJ)Surface Mount5-TSSOP, SC-70-5, SOT-353USV
6-CPH
CPH6904-TL-E
JFET 2N-CH 0.7W CPH6
R10,59000
3 206 - Immediate
onsemionsemi
1
CPH6904-TL-EOSTR-ND
CPH6904-TL-EOSCT-ND
CPH6904-TL-EOSDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active2 N-Channel (Dual)--20 mA @ 5 V50 mA600 mV @ 100 µA6pF @ 5V-700 mW150°C (TJ)Surface MountSC-74, SOT-4576-CPH
TO-92-3(StandardBody),TO-226_straightlead
J113
JFET N-CH 35V 625MW TO92-3
R6,18000
8 235 - Immediate
onsemionsemi
1
J113FS-ND
-
Bulk
ActiveN-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
J112
JFET N-CH 35V 625MW TO92
R6,33000
18 932 - Immediate
onsemionsemi
1
J112FS-ND
-
Bulk
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
J111
JFET N-CH 35V 625MW TO92-3
R7,36000
29 540 - Immediate
70 000 - Factory
onsemionsemi
1
J111FS-ND
-
Bulk
ActiveN-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-206AA TO-18-3
2N4858A
JFET N-CH 40V 0.36W TO-18
R64,72000
196 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
2N4858A-ND
-
Bulk
ActiveN-Channel40 V-8 mA @ 15 V-800 mV @ 0.5 nA10pF @ 10V (VGS)60 Ohms360 mW-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
UJ3N120070K3S
UJ3N120070K3S
1200V 70 MOHM SIC JFET, G3, N-ON
R203,88000
125 - Immediate
UnitedSiCUnitedSiC
1
2312-UJ3N120070K3S-ND
-
Tube
ActiveN-Channel1200 V1200 V-33.5 A-985pF @ 100V90 mOhms254 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UJ3N065025K3S
UJ3N065025K3S
650V 25 MOHM SIC JFET, G3, N-ON,
R261,69000
408 - Immediate
UnitedSiCUnitedSiC
1
2312-UJ3N065025K3S-ND
-
Tube
ActiveN-Channel650 V650 V-85 A-2360pF @ 100V33 mOhms441 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UJ3N120035K3S
UJ3N120035K3S
1200V 35 MOHM SIC JFET, G3, N-ON
R374,81000
197 - Immediate
UnitedSiCUnitedSiC
1
2312-UJ3N120035K3S-ND
-
Tube
ActiveN-Channel1200 V1200 V-63 A-2145pF @ 100V45 mOhms429 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SC-70, SOT-323 PKG
2SK879-GR(TE85L,F)
JFET N-CH 0.1W USM
R6,47000
5 723 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK879-GR(TE85LF)TR-ND
2SK879-GR(TE85LF)CT-ND
2SK879-GR(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel--2.6 mA @ 10 V-400 mV @ 100 nA8.2pF @ 10V-100 mW125°C (TJ)Surface MountSC-70, SOT-323USM
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